Antenna effect in VLSI Fabrication has been explained in this video session. Antenna effect is also known as Plasma Induced Gate Oxide damage, so this effect is due to plasma etching of metals connected to gate. During plasma etching, a large amount of charge has been developed on polysilicon which causes gate oxide damage. Plasma etching process and metal fabrication steps have also been explained briefly.
How to protect the antenna effect, what is the antenna rule and how antenna checks are performed in Physical design will be explained in the next session.
In this series of video sessions, We will cover various effects which should take care of during physical design.
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Your queries/suggestions are most welcome in the comment section.
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VIDEOS IN THIS SERIES
1. Latchup issue:
• Latch-up in CMOS Tech...
2. Latchup prevention techniques
• Latch-up prevention in...
3. Antenna effect:
• Antenna effect in VLSI...
4. Antenna prevention techniques
• Antenna Effect Prevent...
5. Electromigration issue in ASIC
• Electromigration in VL...
6. IR Drop Issue in VLSI
• IR Drop issue in VLSI ...
7. On-Chip variations
• On-Chip Variation in V...
8. Crosstalk effect in VLSI
• Crosstalk issue in VLS...
9. Crosstalk prevention
• Crosstalk issue and p...
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