u r giving good and clear expelnation.sir make video on second order effects which r very importent for finfet so plzzzzz
@analoglayout
6 жыл бұрын
sure
@AjayMukeshMehtaMVD
4 жыл бұрын
Please clear my doubt... When body is negative, it will attract +ve charge ion and remain back -ve charge ion hence -ve ion in channel increases, due to which current flowing through channel increases which means for less/same Vg we are getting higher current flowing through channel than earlier i.e. less Vt required to turn on device due to -ve Vb. This is opposite than what you thaught.
@pragatitripathi3106
4 жыл бұрын
When negative voltage is applied to body it will attract holes which are repealed by positive gate voltage leaving behind immobile negative ions in channel. These are immobile ions they cannot move and are not responsible to constitute current.
@pragatitripathi3106
4 жыл бұрын
Now more immobile ions are need to be removed from depletion region which require higher threshold voltage.
@yuvrajsingh-oy7op
4 жыл бұрын
Hi Ajay, it depends on which mos device you are talking about like in this video NMOS is there which have electrons as carrier. so when you make body signal from zero to positive(electrons gets attracted towards body pin) ..in respect to that you have to increase the gate voltage to get the same channel as before. This whole thing reverses in PMOS as carries are holes and body terminal is Power not ground
@vijayraj521
5 жыл бұрын
Sir in last you said that body should be at lower potential than source. It is same case that you have taken earlier that is vs=0 and vb =-1. Then it is also reverse biased case and it also effect vt. So why you said to maintain reverse bias to the source and body.
@analoglayout
5 жыл бұрын
Body should be always 0 potential , if it's change , this problem we will get
@pacchipulusuvenkatesh3769
6 жыл бұрын
Sir please make a video on Electro static discharge.
@bipulpal7719
6 жыл бұрын
As you talk about leakage current, can you explain in detail about leakage cuurent?
@rajangupta5039
5 жыл бұрын
Excellent way of delivering the lecture which will clear the concept to anybody.Great sir and kindly request to make such type of video further
@analoglayout
5 жыл бұрын
thx for your positive response , keep support our channel
@dasarinikhil14
3 ай бұрын
Hi Sir yesterday i had an interview there they asked me small questions like property errors,soft checks ,LVS, DRC's, Density i prepared so many things but not able to answer these things can you make a video about these things small things from tools
@analoglayout
3 ай бұрын
Yes sure
@siddeshbagali13
5 жыл бұрын
Please try to add some more concepts regarding analog layout with examples using tools like cadence.
@analoglayout
5 жыл бұрын
here almost , i've covered all important topic , il try for extra topic
@mkrishna7682
Жыл бұрын
If we connect body to gate, then it will be DTMOS right sir
@sai_ntr6574
5 жыл бұрын
Sir can please make a video on how vts of a mosfet effects leakage. That is lvt mosfet has more leakage and hvt device has less leakage. Can u explain with some mathematical and theoretical analysis how this happens.
@sushantsharma180
6 жыл бұрын
sir make video on floor plan of analog layout
@bipulpal7719
6 жыл бұрын
sir, i source is not connected to VDD . right
@analoglayout
6 жыл бұрын
VDD or VSS
@santhoshs5851
3 жыл бұрын
in nmos source should be connected to vss
@veerlakalyanbabu821
5 жыл бұрын
Sir can you please explain how subthreshold leakage current becomes worst in short channel mosfets
@analoglayout
5 жыл бұрын
Even if the mos is in off condition , or standby condition , there will be power leakage due to this subthreshold leakage , so cos of this u there will be lot of power leakage , if you what to understand easily IL tell u the story : your mobile phone battery is charged 100% when Ur leaving from Ur home to office , when u reach Ur office your seeing Ur mobile the battery charge is only 50% remain, even Ur not using your mobile , this bcos if subthreshold leakage , meanwhile Ur Mobile system also will get lots of heating issue because leakage voltage and current, leakage power will be converted as a heat . I hope u understood the seriousness of this problem
@rahultheytv5347
4 жыл бұрын
Thank you so much sir
@radhaa6564
5 жыл бұрын
What is the use of tap cell here
@jimmykudo5836
Жыл бұрын
Volume kam hei, kuch samajh nhi aaya🤦
@yuvrajsingh-oy7op
5 жыл бұрын
Can anybody explain me what will happen if i leave the body pin floating?
@analoglayout
5 жыл бұрын
LVS will not pass to fabricate ... and also read the devices parameter detail
@analoglayout
5 жыл бұрын
If u not connected body , how mos will work , body is nthg but a ground , with out nagative , how channel will form ?
@pragatitripathi3106
4 жыл бұрын
Body bias is another control gate which effect my threshold voltage. If we do not have body pin we no longer have control to our body pin and it may effect my vt
@sivaranjanik2827
Жыл бұрын
Dont repeat repeat sir
@analoglayout
Жыл бұрын
Ofcourse my old video have this issue, rectified this on my new videos
Пікірлер: 33