This is another hit! I see that you have some interesting stuff on your website too.
@Pineresearch
2 жыл бұрын
Glad you enjoy it!
@VINICIUSBH100
8 ай бұрын
Hi, Thank you for sharing with us... Best regards from Brasil
@Pineresearch
8 ай бұрын
Thank you watching our video!
@kanishksingh5463
Жыл бұрын
very informative video
@Pineresearch
Жыл бұрын
Thank you!!!
@MatbiangShadap
Жыл бұрын
Thank you for this, Just want to ask if the Aftermath a free or a paid software.
@Pineresearch
Жыл бұрын
AfterMath is free. You will need to create an account on our website (free), but once you do that you can download and start using AfterMath for free. pineresearch.com/
@muthuimwaura2603
5 ай бұрын
Am working on mediated enzymetic electrodes. Meaning i have a redox mediator and a redox enzyme on the electrode.what electrolyte would be best suited for running EIS between buffer and ferri/ferro solution.?
@Pineresearch
5 ай бұрын
Ferro/ferricyanide is soluble in water and I would assume that your enzymetic electrodes are also stable in water. Additionally I am assuming that the ferro/ferricyanide is sold with a potassium cation (potassium ferrocyanide). As such, I might recommend using an aqueous electrolyte of KCl for studying your system. Also, your buffer solution might also be a good candidate as an electrolyte. I hope this was helpful.
@TarikZahzah-ns2bu
Жыл бұрын
I have a question regarding the determination of Ohmic drop in the presence of an inductive loop. Typically, Ohmic drop (iR) or equivalent series resistance (ESR) is defined as the point where the impedance intersects the real axis (X-axis) at the highest measured frequency in a Nyquist plot. However, when dealing with an inductive loop, there may be two or even three intersections with the real axis. For instance, in the case of the green graph (timestamp @12:00), one could estimate the Ohmic drop to be 123-124 Ohm (highest measured frequency), 129 Ohm (first intersection), or 122-123 Ohm (second intersection). Which value should be chosen? Personally, I would opt for the second intersection, as it marks the point where the capacitive behavior begins to emerge.
@Pineresearch
Жыл бұрын
It would be most likely accurate to consider the iR drop to be the first, or highest frequency, intersection in such cases where there are multiple intersections. A notable exception would be something like where an artifact is observed at high frequency showing weird curls that are not attributable to a real process, as with the example in this video. Otherwise, even with the circuit fitting the value for the leading resistor would correspond to where the highest frequency intersection roughly is.
@TarikZahzah-ns2bu
Жыл бұрын
Could you provide more details about the 3-tiered circuit model used to simulate the inductive loop? I'd like to understand its mathematical rationale. From what I gather, the initial semi-circle in the model is represented by the Randles circuit (RC). Then, an inductor is introduced in parallel, effectively creating a second, inverted semi-circle, which, when combined with the RC element, forms a complete circle. Finally, the inductor is connected in series with a resistor to shift the inverted semi-circle, transforming the perfect circle into a loop. Is this a reasonable way to conceptualize the model?
@Pineresearch
Жыл бұрын
The initial semicircle-type feature (usually before the loop part) should be represented by the Randles RC part. You can usually see this in action by dragging the value for the resistor back and forth. It shows the semicircle width growing and shrinking in conjunction with the value change. The R-L combo in parallel does correspond to the loop, or essentially like an inverted semicircle. The idea of it forming a complete circle I think is somewhat of a coincidence of the two features, and only when the values are such that it physically appears that way. There is no real significance to the idea of a perfect circle being formed. The value of the R-L resistor is also apparently inversely proportional to the upside-down semicircle width, and that 3rd tier of the circuit model as best I can tell is related to the process therein - that is, if it is a corrosion process, it's somehow related to the impedance of the corroding film/surface in some way. But, as I think I note in this video and everywhere I discuss this model and these phenomena, there is really no consensus or firm explanation to this model and process. It is in many ways the model used to fit these kinds of features from experience because it simply works mathematically.
@TarikZahzah-ns2bu
Жыл бұрын
@@Pineresearch I would like to contribute an observation to your explanation based on my experience with circuit fitting and encountering a high-frequency inductive loop in my EIS data. I noticed that by introducing a resistor in series with CPE Q2 in your 3-tiered circuit model, the fitting software gains greater flexibility in capturing the high-frequency inductive loop, which may not be immediately apparent. This additional resistor essentially determines the width of the initial circle (typically small), without altering the width of the upside-down semicircle. Allow me to provide an overview of the effects of the three different resistors now present in the 3-tiered circuit model: 1. The resistor in series with the CPE (Q) determines the width of the initial semicircle. 2. The resistor in series with the inductor (L) determines the width of the upside-down semicircle. 3. The standalone resistor determines the width of both the initial and upside-down semicircles while maintaining their relative sizes constant. I hope that this suggestion and minor modification to the 3-tiered model can be helpful to others who are facing the challenge of fitting a high-frequency inductive loop. However, I want to clarify that I cannot provide a physical explanation for why the additional resistor proves effective. It is solely based on my personal experience, where the presence of a third resistor has facilitated the fitting software in capturing the inductive loop, particularly when there is a significant difference in the widths of both semicircles.
@Pineresearch
Жыл бұрын
@@TarikZahzah-ns2bu Thanks for the suggestion. It could be a useful addition to this model, though as you acknowledged in your last paragraph the trouble is mainly the interpretation (or lack thereof) of its physical meaning. While it can be instructive (and I do this personally quite often, actually) to describe circuit elements in terms of "the size of this semicircle or feature on the Nyquist plot," in general that is not the goal and is, by itself, insufficient for comprehensive EIS analysis. The primary exception to this, as I have admitted many times and do so in this video, is that the inductor value is mostly meaningless (or, at the very least, unknown as to its correlation to a real phenomenon). The point, however, is that while it can be helpful as a user to consider "resistor 1 represents semicircle width 1" et al., mainly as a tool for obtaining better circuit fit, ultimately the explanation is better-suited as being "resistor 1 represents the charge transfer resistance of process 1, and it appears as the semicircle width 1." With the aforementioned inductor as a notable exception, in general it is wise to severely limit the number of times you are unable to justify such circuit elements in this fashion and choose to include them simply because the lines match the dots. So mainly, while your suggestion is appreciated, I am simply offering a word of caution in this regard as it relates to rigorous EIS data analysis.
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