This video introduces the benefits of using β-Ga₂O₃ as a semiconductor for power devices. β-Ga₂O₃ is a new, high-performance semiconductor material for power devices that saves energy and has high breakdown voltage because its band gap energy is larger than SiC and GaN. Novel Crystal Technology, Inc. provides substrates that are more affordable and have a larger diameter than SiC and GaN because we grow bulk crystal by the pulling method.
Негізгі бет Features of β-Ga₂O₃
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