In this project we are going to check the VI Characteristics of PN junction diode
The semiconductor diode is created by simply joining an n-type and a p-type material together nothing more just the joining of one material with a majority carrier of electrons to one with a majority carrier of holes. The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is connected to anode (P-side) and -ve terminal of the input supply is connected to cathode (N- side), then diode is said to be forward biased. In this condition the height of the potential barrier at the junction is lowered by an amount equal to given forward biasing voltage. Both the holes from p-side and electrons from n-side cross the junction simultaneously and constitute a forward current( injected minority current - due to holes crossing the junction and entering N-side of the diode, due to electrons crossing the junction and entering P-side of the diode). Assuming current flowing through the diode to be very large, the diode can be approximated as shortcircuited switch. If -ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the input supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this 17 condition an amount equal to reverse biasing voltage increases the height of the potential barrier at the junction. Both the holes on p-side and electrons on n-side tend to move away from the junction thereby increasing the depleted region. However the process cannot continue indefinitely, thus a small current called reverse saturation current continues to flow in the diode. This small current is due to thermally generated carriers. Assuming current flowing through the diode to be negligible, the diode can be approximated as an open circuited switch.
#application of diode :-
1.Rectifier.
2.Detection signals.
3.Mixing signals.
4.uni-directional current flow circuits.
#Suggest me your Requirements and i will make a video on that...
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