My pleasure ! Happy learning 🎆 Thanks for watching
@johnbollam9926
Жыл бұрын
do more videos sir it would be helpful us 🥰
@sreemukhikottada3518
10 ай бұрын
Thankyou for the explanation 😊 can you suggest any good book for short channel effect please 😢
@semitech01
10 ай бұрын
Hey Sreemukhi kottada you can find it here - www0.cs.ucl.ac.uk/staff/ucacdxq/projects/vlsi/report.pdf
@azamatbezhan1653
2 ай бұрын
Is there any alternative method to replace Bottom silicon insulator technoligy to more enhanced for reduce threshold leakage
@semitech01
2 ай бұрын
yes , using High-k/Metal Gate (HKMG) Technology: High-k dielectrics and metal gates can be used to replace traditional silicon dioxide gates. High-k materials have a higher dielectric constant, which allows for a thicker gate dielectric without compromising performance, thereby reducing gate leakage. Other techniques are GAA, FinFETs, Fully depleted SOI . Hope it helped. Thanks for watching the video.
@azamatbezhan1653
2 ай бұрын
@@semitech01 is it possible to use high k/metal gate in Gaafet
@semitech01
2 ай бұрын
Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage. For more you can refer below paper www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors
@semitech01
2 ай бұрын
@@azamatbezhan1653 Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage. To know more you can refer : www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors
@azamatbezhan1653
2 ай бұрын
@@semitech01 best answer
@izzatyusri6880
Жыл бұрын
Really good explanation. May i know if there is anyway i can make it as my reference in my thesis?
@semitech01
Жыл бұрын
Great to know that you liked this video. I believe it's not a good idea to have a video in reference. But I can share a couple of references (papers & books) which you could give for the reference for GIDL. You can mail me at niranjan.rvceit@gmail.com
@MyINDIANway-yx1om
8 ай бұрын
Jab voltage vds apply kr rhe h toh vdg kyo liya ???
@semitech01
8 ай бұрын
Bcz drain leakage current is induced by the gate. Apparently, as vds increases Vdg increases as well..which leads to overcome of gate and drain region beneath the gate. Which leads to leakage current.( As explained in the video) Thereby without taking Vdg into context one can't analyse it. Hope you are able to comprehend.
@raghaver5964
Жыл бұрын
Density of knowledge is high
@semitech01
Жыл бұрын
Thank you 😊 stay connected for more electronics videos.
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