In this video number {1059}, IR2110 and IR2113, High and Low Side Driver IC for High side and low side mosfet / IGBT. i explained datasheet, pinout and its Testing. these are used to drive H-Bridge (full bridge) topologies configurations. IR2110 is 500 volt and IR2113 is 600 volt maximum. Floating channel designed for bootstrap operation and fully operational to +500V or +600V. Tolerant to negative transient voltaged V/dt immune. Gate drive supply range from 10 to 20V. Undervoltage lockout for both channels. 3.3V logic compatible Separate logic supply range from 3.3V to 20VLogic and power ground ±5V offset. CMOS Schmitt-triggered inputs with pull-down. Cycle by cycle edge-triggered shutdown logic. Matched propagation delay for both channels. Outputs in phase with inputs. The IR2110/IR2113 are high voltage, high speed power MOSFET andIGBT drivers with independent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS technologies enableruggedized monolithic construction. Logic inputs are compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The outputdrivers feature a high pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 500 or 600 volts
Both channels are controlled by TTL/CMOS compatible inputs.
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00:00 IR2110 IR2113 datasheet explained,
00:44 IR2110 & IR2113, block diagram
01:30 IR2110 / IR2113 pinout
02:42 IR2110 / IR2113 test circuit
Негізгі бет Ғылым және технология {1059} IR2110 High and Low Side Driver, Testing, Explained
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